inchange semiconductor isc product specification isc silicon npn power transistor BUX42 description low collector saturation voltage- : v ce( sat ) = 1.2v (max.)@i c = 4a fast switching speed applications designed for use in switching and linear applications in military and industrial equipment. absolute maximum ratings(ta=25 ) symbol parameter value unit v ceo collector-emitter voltage 250 v v cex collector-emitter voltage v be = -1.5v 300 v v cbo collector-base voltage 300 v v ebo emitter-base voltage 7 v i c collector current-continuous 12 a i cm collector current-peak 15 a i b b base current-continuous 2.4 a p c collector power dissipation @t c =25 120 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.46 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUX42 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a ; i b = 0 250 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c = 4a; i b = 0.4a b 1.2 v v ce (sat)-2 collector-emitter saturation voltage i c = 6a ;i b = 0.75a 1.6 v v be (sat) base-emitter saturation voltage i c = 6a ;i b = 0.75a 2.0 v i ceo collector cutoff current v ce = 200v; i b = 0 1.0 ma i cex collector cutoff current v ce = 300v;v be = -1.5v v ce = 300v;v be = -1.5v;t c =125 1.0 5.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1 ma h fe-1 dc current gain i c = 4a ; v ce = 4v 15 45 h fe-2 dc current gain i c = 6a ; v ce = 4v 8 f t current-gain?bandwidth product i c = 1a;v ce = 15v, f test = 10mhz 8 mhz switching times t on turn-on time i c = 6a ;i b1 = 0.75a; v cc = 150v 0.23 1.0 s t s storage time 1.5 2.0 s t f fall time i c = 6a ;i b1 =-i b2 = 0.75a; v cc = 150v 0.2 1.2 s isc website www.iscsemi.cn
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